Search results for "Boron doping"
showing 3 items of 3 documents
Effect of Boron Doping on the Wear Behavior of the Growth and Nucleation Surfaces of Micro- and Nanocrystalline Diamond Films
2016
B-doped diamond has become the ultimate material for applications in the field of microelectromechanical systems (MEMS), which require both highly wear resistant and electrically conductive diamond films and microstructures. Despite the extensive research of the tribological properties of undoped diamond, to date there is very limited knowledge of the wear properties of highly B-doped diamond. Therefore, in this work a comprehensive investigation of the wear behavior of highly B-doped diamond is presented. Reciprocating sliding tests are performed on micro- and nanocrystalline diamond (MCD, NCD) films with varying B-doping levels and thicknesses. We demonstrate a linear dependency of the we…
Optical properties and structure particularities of LiNbO 3 crystals grown from a boron-doped melt
2019
A series of LiNbO3:B crystals was grown from the melt doped by boron. It is shown that LiNbO3:B crystals possess an increased resistance to optical damage. We have found changes according to Raman spectra confirming the ordering of Li+, Nb5+ cations and vacancies along the polar axis. The chemical interactions were studied in the system Li2O–B2O3–Nb2O5. Boron cations are unable to incorporate into a cation sublattice of LiNbO3, but they change the physic-chemical structure of a melt. It contributes to an increased structure and optical uniformity of LiNbO3:B.
Boron doping of silicon rich carbides: Electrical properties
2013
Boron doped multilayers based on silicon carbide/silicon rich carbide, aimed at the formation of silicon nanodots for photovoltaic applications, are studied. X-ray diffraction confirms the formation of crystallized Si and 3C-SiC nanodomains. Fourier Transform Infrared spectroscopy indicates the occurrence of remarkable interdiffusion between adjacent layers. However, the investigated material retains memory of the initial dopant distribution. Electrical measurements suggest the presence of an unintentional dopant impurity in the intrinsic SiC matrix. The overall volume concentration of nanodots is determined by optical simulation and is shown not to contribute to lateral conduction. Remarka…